Engineer T.P. Ma recognized for his scientific accomplishments
Tso-Ping (T.P.) Ma, the Raymond John Wean Professor of Electrical Engineering and professor of applied physics, will receive the 2005 Andrew S. Grove Award from the Institute of Electrical and Electronics Engineers (IEEE) for his contributions to solid-state devices and technology.
This IEEE Award, established in 1999, honors the lifetime achievements of Andrew S. Grove, who was instrumental in founding Intel Corporation. A bronze medal, a certificate and honorarium will be presented at the award ceremony during the International Electron Device Meeting in December of 2005.
Ma, who is chair of the Department of Electrical Engineering and co-director of the Yale Center for Microelectronics, is being honored for his work on the development and understanding of complementary metal oxide semiconductor, or CMOS, gate dielectrics. His research and teaching at Yale have focused on microelectronics, semiconductors, MOS interface physics, ionizing radiation and hot electron effects, advanced gate dielectrics, flash memory device physics, and ferroelectric thin films for memory applications.
After receiving his Ph.D. from Yale in 1974, Ma did research at IBM on advanced silicon device technology and ionizing radiation effects in MOS devices until joining the Yale faculty in 1977. He has received several national awards and is a member of the National Academy of Engineering, a fellow of IEEE, a life member of the American Physical Society, a member of the Electrochemical Society and an honorary professor of the Chinese Academy of Sciences. Ma has served as a consultant for industry worldwide and as the principal investigator of joint research and development projects with numerous companies worldwide.
The IEEE is a non-profit, technical professional association and a leading authority in technical areas ranging from computer engineering, telecommunications and biomedical technology, to electric power, aerospace and consumer electronics.
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