for solid-state research
Tso-Ping (T.P.) Ma, the Raymond John Wean Professor and chair of electrical engineering, has received the 2005 Andrew S. Grove Award from the Institute of Electrical and Electronics Engineers (IEEE) for his pioneering contributions to the development and understanding of complementary metal-oxide semiconductor gate dielectrics, the basis of today's silicon chips.
Sponsored by the IEEE Electron Devices Society, the award recognizes outstanding contributions to solid-state devices and technology. Ma will receive the award at the society's annual meeting on Dec. 6 in Washington, D.C.
Ma recognized early on the importance of gate tunneling current in metal-oxide semiconductor (MOS) behavior, which is now considered by the semiconductor industry as a major issue for scaling future MOS technology.
While at Yale and as a staff engineer at the IBM Systems Products Division in East Fishkill, New York, Ma made significant contributions to chip technology in silicon integrated circuits, increasing integrated circuit operating speed and reliability and lowering the cost per function. He is co-author with Paul V. Dressendorfer of "Ionizing Radiation Effects in MOS Devices and Circuits," hailed widely by colleagues as the most authoritative and comprehensive work on the subject.
Ma, who holds master's and doctoral degrees from Yale, is a member of the U.S. National Academy of Engineering and a fellow of the IEEE. He has received the IEEE Electron Devices Society's Paul Rappaport Award and was general chair of the IEEE Semiconductor Interface Specialists Conference and the International Symposium on VLSI Technology, Systems and Applications.
The IEEE is the world's largest technical professional society with approximately 360,000 members in 170 countries. Through its members, it provides leading authority on areas ranging from aerospace, computers and telecommunications to biomedicine, electric power and consumer electronics.
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